Abnormal phenomenon of ac Stark splitting in magneto-optical traps

We experimentally study the ac Stark splitting in D2 line of cold Rb-87 atoms. The frequency span between the Autler-Townes doublets is obviously larger than that derived from theoretical calculation. Two physical effects, which increase the effective Rabi frequency, contribute to the splitting broadening. First, atoms tend to distribute in strong lield places of a inhomogeneous red-detuned light field. Second, atoms reabsorb scattered light when they are huge in number and high in density.

Natural selection on EPAS1 (HIF2 alpha) associated with low hemoglobin concentration in Tibetan highlanders

By impairing both function and survival, the severe reduction in oxygen availability associated with high-altitude environments is likely to act as an agent of natural selection. We used genomic and candidate gene approaches to search for evidence of such genetic selection. First, a genome-wide allelic differentiation scan (GWADS) comparing indigenous highlanders of the Tibetan Plateau (3,200 3,500 m) with closely related lowland Han revealed a genome-wide significant divergence across eight SNPs located near EPAS1. This gene encodes the transcription factor HIF2 alpha, which stimulates production of red blood cells and thus increases the concentration of hemoglobin in blood. Second, in a separate cohort of Tibetans residing at 4,200 m, we identified 31 EPAS1 SNPs in high linkage disequilibrium that correlated significantly with hemoglobin concentration. The sex-adjusted hemoglobin concentration was, on average, 0.8 g/dL lower in the major allele homozygotes compared with the heterozygotes. These findings were replicated in a third cohort of Tibetans residing at 4,300 m. The alleles associating with lower hemoglobin concentrations were correlated with the signal from the GWADS study and were observed at greatly elevated frequencies in the Tibetan cohorts compared with the Han. High hemoglobin concentrations are a cardinal feature of chronic mountain sickness offering one plausible mechanism for selection. Alternatively, as EPAS1 is pleiotropic in its effects, selection may have operated on some other aspect of the phenotype. Whichever of these explanations is correct, the evidence for genetic selection at the EPAS1 locus from the GWADS study is supported by the replicated studies associating function with the allelic variants.

Effects of Abnormal Early Rearing Environments on Fear Memory in Adult Rats

为了探讨早期饲养环境对成年后大鼠条件化恐惧的影响,实验采用巴氏恐惧条件化的方法对不同饲养环境下的大鼠进行了行为检测.具体操作为:把断奶后的大鼠饲养在3个不同的人工控制的环境中(丰富环境、社群环境和贫瘠环境);8周后进行恐惧条件化训练和测试(指标为僵直百分比),以及检测不同饲养环境下的大鼠的体重、自发活动和足部电击敏感性.结果显示:与社群组相比,丰富组的大鼠条件化僵直水平明显增加,而贫瘠组的明显减少;丰富和贫瘠环境明显的影响了大鼠的体重;不同环境对自发活动和足部电击敏感性没有影响.这些结果说明幼年期的丰富环境能提高成年后大鼠的由声音诱发的条件化恐惧反应,而贫瘠环境则削弱了这种反应.

Abnormal regional homogeneity of drug-naive obsessive-compulsive patients

To explore the possible abnormal resting-state activity in patients with obsessive-compulsive disorder (OCD), the regional homogeneity (ReHo) of 22 pairs of patients and well-matched healthy controls was calculated. Compared with controls, the patients showed higher ReHo in the left anterior cingulate cortex, but lower ReHo in the left inferior temporal gyrus. These findings supported the abnormal resting-state brain activity in drug-naive OCD patients. No significant correlations between ReHo value and four clinical characteristics were found, suggesting that abnormal ReHo might be trait-related in OCD. NeuroReport 21:786-790 (C) 2010 Wolters Kluwer Health vertical bar Lippincott Williams & Wilkins.

Abnormal ferroelectric response and enhancement of piezoelectricity of PbTiO3 under uniaxial compression

The ferroelectricity of rhombohedral PbTiO3 under uniaxial compression is investigated from first-principles study. Upon compression, the ferroelectricity decreases until a critical stress of -29 GPa and then increases with a further increase of the magnitude of the uniaxial compressive stress. We also find that uniaxial compression could enhance piezoelectricity and that the maximum piezoelectric coefficient d(33) occurs at sigma(33)=-49 GPa, which supports the experimentally observed piezoelectric behavior in rhombohedral Pb(Mg1/3Nb2/3O3)-0.32PbTiO(3) [Q. Wan, C. Chen, and Y. P. Shen, J. Appl. Phys. 98, 024103 (2005)]. Our calculated results show that the Pb, Ti, and O atoms have different contributions to the total polarization with increasing the magnitude of uniaxial compressive stress, and that when -sigma(33)>55 GPa, the Ti atoms no longer have contributions to the polarization, which leads to the changes of ferroelectricity and piezoelectricity. (C) 2008 American Institute of Physics.

Abnormal energy dependence of photoluminescence decay time in InGaN epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.

Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.

Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

The growth interruption (GI) effect on GaSb quantum dot formation grown on GaAs by molecular beam epitaxy was investigated. The structure characterization was performed by reflection high-energy electron diffraction (RHEED), along with photoluminescence measurements. It is found that the GI can significantly change the surface morphology of GaSb QDs. During the GI, the QDs structures can be smoothed out and turned into a 2D-like structure. The time duration of the GI required for the 3D/2D transition depends on the growth time of the GaSb layer. It increases with the increase of the growth time. Our results are explained by a combined effect of the stress relaxation process and surface exchange reactions during the GI. (C) 2002 Elsevier Science B.V. All rights reserved.

Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density

We have investigated temperature dependent photoluminescence of both buried and surface self-assembled InAs/GaAs quantum dots with an areal density up to similar to 10(11)/cm(2). Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material variation from 15 to 130K. Besides the line width and the integrated intensity both first decrease and then increase in this temperature interval. The observed phenomena can be explained by carrier trapping effects by some shallow localized centers near the surface quantum dots.

Abnormal photoabsorption in high resistance GaN epilayer

Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.